Presentation Information

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-2]Measurement of acceptor concentration in LED with top GaN tunnel junction

〇Kazuki Osada¹, Hisanori Ishiguro¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:

tunnel junction,Mg activation,C-V measurement

We investigated the Mg activation in the p-GaN layer of LEDs with a top GaN tunnel junction by comparing samples with different mesa diameters. Capacitance–voltage (C–V) measurements were carried out to evaluate the acceptor concentration. After annealing at 725 °C for 30 minutes in N2 atmosphere, the sample with a smaller mesa diameter exhibited a higher acceptor concentration, suggesting enhanced hydrogen removal due to the increased ratio of mesa sidewall area. These results imply that, in such top tunnel junction structures, hydrogen desorption mainly occurs from the mesa sidewalls.

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