[10a-N301-1~11] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-N301-6] High Efficient Green Emission from Ag-coated InGaN/GaN Quantum Well by Ultra-Viotet Laser Irradiation and Annealing

〇(M1)Naoki Ueda¹, Shun Ito¹, Tetsuya Matsuyama¹, Shunsuke Murai¹, Kenji Wada², Mitsuru Funato³, Yoichi Kawakami³, Koichi Okamoto¹ (1.Osaka Metro. Univ., 2.OMU-ESCARI, 3.Kyoto Univ.)

Keywords:

LED,plasmon,nitride

We achieved strong enhancement of green emission by laser irradiation and annealing of Ag-coated InGaN/GaN QWs. A 5.3-fold increase was observed, attributed to SPR localization and Ag-induced defect passivation.