[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N302-1] Nanoampere Parallel Single-Electron Pumping in Silicon with Split-Source Control

〇Gento Yamahata¹, Takase Shimizu¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT BRL)

Keywords:

silicon,single electron,quantum dot

To achieve the ultra-high accuracy required for quantum-current standards, single-electron pumps must deliver larger currents—from picoamperes to nanoamperes. We report a parallel single-electron pump architecture with split source electrodes. By optimizing each pump’s operating conditions through the source voltages, we realize scalable operation with up to four pumps in parallel and obtain nanoampere-level currents. This represents an important technology with clear prospects for further integration and even higher output currents.