[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N302-10] Analysis of Subthreshold Current Variability in Bulk MOSFETs at Cryogenic Temperatures

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Univ. of Tokyo,, 2.AIST)

Keywords:

Cryo-CMOS,Variability,Subthreshold current

Variability of 65 nm bulk MOSFETs in subthreshold region was measured at 300 K and 1.5 K using addressable transistor matrix arrays. Subthreshold characteristics at room temperature are evaluated using the subthreshold slope (SS). However, Id-Vg curves of short-channel MOSFETs at cryogenic temperatures show large irregularity, such as kinks and humps in the subthreshold region, making it difficult to evaluate their variability using SS, which is defined as a derivative. In this study, we defined metrics instead of SS and analyzed the subthreshold current variability of bulk MOSFETs.