[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-N302-4] 3D Stacked Silicon Quantum Dots Utilizing Potential Barriers Formed by Barrier Gates

〇(D)Junoh Kim¹, Daiki Futagi¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab Univ. of Tokyo)

Keywords:

Quantum dot