[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-N302-5] Experimental demonstration of Vertically Stacked Two-Layer Silicon Quantum Dots

〇(DC)Daiki Futagi¹, Jun-Oh Kim¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1.IIS, UTokyo., 2.AIST, Japan., 3.d.lab, UTokyo.)

Keywords:

Quantum dots,Qubits,Silicon

Silicon quantum dots are promising candidates for the realization of quantum computers due to their compatibility with CMOS technology. However, lateral architecture have limitations in integration density, making the transition to three-dimensional (3D) stacked structures crucial. In this study, we fabricated and demonstrated vertically stacked two-layer silicon quantum dot devices. We observed quantum dot operation at 4K and confirmed that the quantum dots in each layer can be individually controlled. This is a significant achievement demonstrating the feasibility of 3D stacked qubit devices.