[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-N302-8] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (17) -Definition of single defect level-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

single interface defects,definition of single defect level,charge pumping

A study was conducted to determine the A-like and D-like positions of single interface defects (traps) near the upper end E_em,e and lower end E_em,h of the energy range detectable by the charge pumping method within the band gap. The A-like and D-like level positions were derived from the measurements by defining the energy position at which the electron occupancy probability is 0.5. The peak position and peak height of DOS were improved by these results.