[10a-N302-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N302-9] Cryogenic conductance modeling of highly doped Si for advanced CMOS applications

〇(D)Keito Yoshinaga¹, Ryo Toyoshima¹, Munehiro Tada², Ken Uchida¹ (1.Univ. Tokyo, 2.Keio Univ.)

Keywords:

cryogenic,conductance,semiconductor

The electrical conductivity of the n-well resistor was measured from room temperature to 4.3 K, and the experimental data for variable-range hopping conductivity in the low-temperature region was successfully reproduced with high accuracy by numerical calculations that took into account the temperature dependence of the Fermi level and the density of states at the conduction band edge. To calculate the Fermi level in lightly compensated semiconductors, a calculation method was developed that took into account the ionization of donors by compensating acceptors and the contribution to screening by electrons capable of hopping conduction.