[10a-N303-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-N303-3] Quantitative consideration of spin-relaxation mechanisms in (110) GaAs/AlGaAs quantum wells II

〇Yuzo Ohno^1,2, Satoshi Iba² (1.Univ. of Tsukuba, 2.AIST)

Keywords:

spintronics,quantum wells,spin-orbit interaction

At the 2025 JSPS Spring meeting, we reported that the temperature and excitation intensity dependence of spin relaxation time of two-dimensional electrons in (110) GaAs/AlGaAs quantum wells (QWs) can be quantitatively explained by considering the Elliott-Yafet (EY) mechanism, the exciton spin relaxation mechanism, and the spin relaxation due to inter-subband scattering. The Dresselhaus spin-orbit interaction coefficient, which was a fitting parameter, was evaluated to be 20 eVA3. In the present study, we theoretically analyzed the spin relaxation in (110) QWs further, and found that the calculated results are in good agreement with the experimental values when the Dresselhaus spin-orbit interaction coefficient is 10eVA3.