[10a-N303-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[10a-N303-7] Effect of light-absorbing layer thickness on light polarization detection properties of GaNAs photodiode based on defect-enabled spin filtering

〇Daiki Mineyama¹, Itsu Tanaka¹, Kaito Nakama², Hidetoshi Hashimoto², Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,polarization,photodiode