[10a-N303-1~11] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

10:45 〜 11:00英語発表

[10a-N303-7] Effect of light-absorbing layer thickness on light polarization detection properties of GaNAs photodiode based on defect-enabled spin filtering

〇Daiki Mineyama¹, Itsu Tanaka¹, Kaito Nakama², Hidetoshi Hashimoto², Keisuke Minehisa², Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

キーワード：

dilute nitride semiconductor、polarization、photodiode