Presentation Information
[10a-N323-8]Monte Carlo Simulation of Fast Neutrals impinging on Substrate
〇Kazuki Denpoh1, Masaaki Matsukuma1 (1.Tokyo Electron Technology Solutions)
Keywords:
plasma,fast neutral,simulation
We have developed a single/dual-frequency sheath model for gas mixture plasmas by modifying the previous model for noble gas plasmas and adopting ion collision cross sections generated by DNT+DM. The new model allows us to simulate fluxes and energy-angular distribution functions of fast neutrals on a substrate in a gas mixture plasma, and also ion reaction rates in the sheath. First, the model was applied to an Ar CCP in a GEC Reference Cell reactor. The simulation results indicate that the consideration of fast neutral Ar in etching and deposition processes might be more important than Ar+. As another example, simulation results of an Ar/H2 CCP for a film deposition process will be presented at the meeting.