[10a-N401-1~9] 13.3 Insulator technology

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N401-1] Si substrate orientation dependence of the gate insulator formation

〇Yukitomo Morita¹, Masashi Tsuruguchi¹, Ken Hayakawa², Haruo Sudo², Koji Izunome², Shun-ichiro Ohmi¹ (1.Sci. Tokyo, 2.GWJ Co., Ltd.)

Keywords:

Si(110),SiO2,gate insulator

We have investigated Si substrate orientation dependence of the gate insulator formation. In this work, we will report the electrical characteristics of thermal oxide film fabricated on Si(100) and Si(110) substrates for the purpose of evaluating Si substrate orientation dependence of the electrical characteristics of the gate insulator.