[10a-N401-1~9] 13.3 Insulator technology

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-N401-6] Influence of Surface Potential Fluctuation on Evaluation of Interface State Density by High-frequency CV method

〇Shinichi Takagi¹, Kasidit Toprasertpong,² (1.Teikyo Univ., 2.The Univ. Tokyo)

Keywords:

interface state,MOS interface,high frequency C-V method

Surface potential fluctuations are quantitatively evaluated using the conductance method, but their effect on the interface state density evaluated from C-V characteristics has hardly been investigated. In this study, we quantitatively investigated the effect of surface potential fluctuations on evaluation of interface state density using high-frequency C-V characteristics, and found that surface potential fluctuations create an apparent interface state density distribution with a U-shaped energy distribution near the band edge when evaluated using high-frequency C-V characteristics.