[10a-N402-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N402-1] Improving optical property of InP/InAs heterostructure nanowire array grown by self-catalyzed vapor-liquid-solid mode

〇Guoqiang Zhang^1,2, Haoche Zhou¹, Masato Takiguchi^1,2, Hideki Gotoh³, Haruki Sanada¹ (1.NTT BRL, 2.NTT NPC, 3.Hiroshima Univ.)

Keywords:

semiconductor,nanowire,heterostructure

In this study, we grow vertical InP/InAs nanowires on InP(111) substrates by self-catalyzed vapor-liquid-solid approach. We find photoluminescence (PL) lifetimes are as long as 3-5 ns, which are almost unaffected by surface passivation. Moreover, PL measurements revealed lasing behavior from the nanowire array at significantly low excitation power.