[10a-N402-1~11] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

9:00 〜 9:15

[10a-N402-1] 自己触媒法InP/InAsナノワイヤ配列の光学特性改善

〇章 国強^1,2、Haochen Zhou¹、滝口 雅人^1,2、後藤 秀樹³、眞田 治樹¹ (1.NTT物性基礎研、2.NTTナノフォトセンタ、3.広島大)

キーワード：

半導体、ナノワイヤ、ヘテロ構造

In this study, we grow vertical InP/InAs nanowires on InP(111) substrates by self-catalyzed vapor-liquid-solid approach. We find photoluminescence (PL) lifetimes are as long as 3-5 ns, which are almost unaffected by surface passivation. Moreover, PL measurements revealed lasing behavior from the nanowire array at significantly low excitation power.