[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-10] Analysis of the electronic properties of stress-loaded GaN substrates by Raman spectroscopy

〇Takuto Matsuda¹, Kodai Matsushita¹, Jun Suda¹ (1.Chukyo Univ.)

Keywords:

Gallium Nitride,Raman spectroscopy,Power Electronics

We have reported that resistivity increases due to thermal stress at the semiconductor interface of GaN semiconductors with electrodes. In this paper, to investigate the aim of evaluating the pure bending stress effect of the electronic properties in-situ Raman experiments for LOPC mode on n-type GaN semiconductors were performed from 0 MPa to 153 MPa by a three-point bending test. Electronic properties were analyzed by experimental spectra for LOPC mode to determine the tensile stress effect on electron density, electron mobility, and resistivity.