[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-12] Fabrication of Si(111)/Diamond Templates for Advanced III-Nitride Process

〇(M1C)Hikaru Iwamoto¹, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ.)

Keywords:

nitride semiconductor,diamond,surface-activated bonding

We previously demonstrated the excellent heat dissipation properties of a nitride semiconductor/Diamond structure fabricated using the surface-activated bonding method. In this study, we fabricated a Si(111)/Diamond structure by bonding a thin Si(111) film onto a Diamond substrate to enable crystal growth after bonding, which is assumed to play an important role in expanding the structural flexibility of nitride layer.