Presentation Information
[10a-P04-12]Fabrication of Si(111)/Diamond Templates for Advanced III-Nitride Process
〇(M1C)Hikaru Iwamoto1, Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ.)
Keywords:
nitride semiconductor,diamond,surface-activated bonding
We previously demonstrated the excellent heat dissipation properties of a nitride semiconductor/Diamond structure fabricated using the surface-activated bonding method. In this study, we fabricated a Si(111)/Diamond structure by bonding a thin Si(111) film onto a Diamond substrate to enable crystal growth after bonding, which is assumed to play an important role in expanding the structural flexibility of nitride layer.