[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-13] Characterization of processed n-GaN surface by electrochemical impedance spectroscopy

〇Takahiro Shimazaki¹, Enku Takahashi¹, Satoaki Akazawa¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

Keywords:

nitride semiconductor,electrochemical characterization,electrochemical etching