Presentation Information
[10a-P04-14]Isolation Characteristics of GaN Mesas on Diamond Substrates
Fabricated Using the Surface-Activated Bonding
〇Yosei Sunamoto1, Tetsuya Suemitsu2, Naoteru Shigekawa1, Jianbo Liang1 (1.Osaka Metropolitan Univ., 2.Tohoku Univ.)
Keywords:
nitride semiconductor,diamond,surface-activated bonding
We previously demonstrated excellent heat dissipation properties of nitride semiconductor/3C-SiC buffer//diamond structures fabricated using the surface-activated bonding method. In this study, aiming to reduce the leakage current in nitride devices, we fabricated and evaluated a structure that utilizes the insulating properties of diamond.