[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-17] Characterization of p-type GaInN/GaN MQWs for GaN-based HBTs

〇Ryosei Inoue¹, Sotaro Ishida¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. of Tech.)

Keywords:

GaN,HBT,MQW

GaN-based heterojunction bipolar transistors (HBTs) are viewed as devices showing higher perfromance than that of GaN HEMTs or other-material-based HBTs in high-power RF applications. However, there are known to be technical challenges in realizing GaN HBTs. That is, GaN-HBTs must have embeded p-type regions inside, and they hinder obtaining a high lateral condction in the base region which is necessary for GaN HBTs. We have investigated the application of a GaInN/GaN multiple quantum well (MQW) structure to reduce the lateral resistance of the p-type base layer. In this study, we report on the investigation of Mg modulation doping in the MQW structure.