[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-19] Electrical properties of recessed-gate AlGaN/GaN heterostructure transistors processed by contactless-photoelectrochemical (CL-PEC) etching

〇Tokachi Katsumata¹, Naoki Shiozawa¹, Haruki Okano¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

Keywords:

photoelectrochemical