[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-20] Deposition Mechanism of Al_1-xTi_xO_y Gate Insulator Films for GaN-based MIS Devices by Mist-CVD

〇Hiroshi Otake¹, Yusui Nakamura¹, Zenji Yatabe¹ (1.Kumamoto Univ.)

Keywords:

GaN,mist CVD,AlTiO

This study focused on Al_1−xTi_xO_y alloy gate insulator films for GaN-based MIS devices. We deposited Al_1−xTi_xO_y by mist-CVD and evaluated the controllability of the alloy ratio, the controllability of the physical properties, and the deposition mechanism. The XRF measurements revealed that the composition ratio of Al in Al_1−xTi_xO films increased with increasing deposition temperature. This is thought to be due to the temperature dependence of the deposition rate of Al₂O₃ and TiO₂. Furthermore, the obtained physical property values are comparable to those reported for Al_1−xTi_xO_y films deposited by ALD.