Presentation Information
[10a-P04-21]Mist Thermal Oxidation Process for GaN Surface Oxidation
〇Ryosuke Hamasuna1, Thin Nu Soe1, Takumi Hirakura1, Yusui Nakamura1, Zenji Yatabe1 (1.Kumamoto Univ.)
Keywords:
termal oxidation,mist-cvd,mist etching
A recessed-gate structure is often used for realizing normally-off operation in AlGaN/GaN MOS-HEMTs, however, conventional dry etching causes damage to the GaN surface. In this study, we focused on mist etching using a mist-CVD method as a low-damage alternative. A two-step process is proposed, in which the GaN surface is thermally oxidized and the resulting Ga2O3 is etched. As an initial investigation, thermal oxidation of Si substrates was performed in this study.