Presentation Information
[10a-P04-3]Investigation of electronic properties of the SiC/SiO2 Interface in High-temperature SiC-SBD by Micro-Raman Spectroscopy
〇Shu Ishida1, Tatsuya Kiyozumi1, Jun Suda1 (1.Chukyo Univ.)
Keywords:
silicon carbide,Raman spectroscopy,Power Electronics
Wide-bandgap semiconductors in vehicle-mounted power devices may operate at temperatures above 200 °C. As a result, thermal stress can act on the electrode interfaces, leading to reliability issues such as threshold voltage variations, mechanical delamination, and cracks. It is necessary to understand the changes in thermal stress and its electronic properties for the development of power devices for EVs. In this paper, we measured the LOPC mode spectra of the SiC/SiO2 interface of SiC-SBD, conducted dielectric dispersion analysis, and reported on the obtained electron density, electron mobility, and resistivity.