[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-4] TCAD and Experimental Analysis of Geometric Components of Charge Pumping Current in n-SiC MOSFETs

〇Kenta Kimata¹, Kazuma Simura¹, Dai Okamoto¹, Mitsuru Sometani², Hirohisa Hirai², Mitsuo Okamoto², Tetsuo Hatakeyama¹ (1.Toyama Pref. Univ., 2.AIST)

Keywords:

semiconductor

In Charge Pumping (CP) measurements of SiC MOSFETs, it is important to suppress the Geometric Component (GC). Therefore, in this study, we aimed to clarify the generation mechanism of GC and identify the conditions under which GC can be suppressed. To achieve this, we conducted experiments and TCAD simulations by varying the gate length (L), the gate voltage rise time (t_f), and the fall time (t_f). As a result, it was shown that effective suppression of GC can be achieved by setting the gate voltage fall time (t_f) sufficiently long and by shortening the gate length (L).