[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-7] Demonstration of near-field etching using oxygen as a radical source for SiC wafer

〇Reo Yoshimatsu¹, Kyohei Yoshida², Shoji Nagaoka^2,3, Makoto Takafuji¹ (1.Faculty of Advanced Science and Technology, Kumamoto University, Kumamoto, 850-8555, Japan, 2.Kumamoto Industrial Research Institute, Kumamoto, 892-0901, Japan, 3.Kumamoto Innovative Development Organization, Kumamoto University, Kumamoto 850-8555, Japan)

Keywords:

near-field light,silicon carbide,coherent phonon