[10a-P04-1~22] 13.7 Compound and power devices, process technology and characterization

[10a-P04-8] Evaluation of stress distribution on GaN wafer applied with bending stress

〇Kodai Matsushita¹, Takuto Matsuda¹, Jun Suda¹ (1.Chukyo Univ.)

Keywords:

Gallium nitride,Raman spectroscopy,Power Electronics

Wide-bandgap semiconductor device was operated at temperatures above 200℃, and localized stress at the electrode interface has been identified as a factor contributing to reliability degradation, such as threshold voltage variation, mechanical delamination, and cracks. We had investigated the high-temperature characteristics of thermal stress at the GaN electrode interface using Raman spectroscopy. In this paper, using in-situ Raman measurement for bent GaN sample by three point bending test at room temperature, and compared the experimental results with FEM calculations for bending stress and displacement.