Presentation Information
[10a-P04-8]Evaluation of stress distribution on GaN wafer applied with bending stress
〇Kodai Matsushita1, Takuto Matsuda1, Jun Suda1 (1.Chukyo Univ.)
Keywords:
Gallium nitride,Raman spectroscopy,Power Electronics
Wide-bandgap semiconductor device was operated at temperatures above 200℃, and localized stress at the electrode interface has been identified as a factor contributing to reliability degradation, such as threshold voltage variation, mechanical delamination, and cracks. We had investigated the high-temperature characteristics of thermal stress at the GaN electrode interface using Raman spectroscopy. In this paper, using in-situ Raman measurement for bent GaN sample by three point bending test at room temperature, and compared the experimental results with FEM calculations for bending stress and displacement.