Presentation Information
[10a-P05-16]Evaluation of Thin Films Fabricated by GaN Sputtering Targets
〇Yoshihiro Ueoka1, Mirei Tokiwa1, Koo Bando1, Hidehiko Misaki1, Masahiro Uemukai2, Tomoyuki Tanikawa2, Ryuji Katayama2, Masami Mesuda1 (1.Tosoh Corp., 2.The Univ. of Osaka)
Keywords:
GaN,sputtering,impurity
Compared to the conventional MOCVD method, sputtering-based GaN deposition has the advantages of low-temperature process, hydrogen-free, no exclusion facilities, and high doping concentration.We have developed a high-purity GaN sputtering target and have reported on GaN films fabricated using this target. However, the relationship between deposition conditions, impurities in the film, and surface morphology has not yet been clarified. In this study, we evaluated the relationship between various deposition conditions and film properties.