The 86th JSAP Autumn Meeting 2025
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Poster presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[10a-P05-1~16]15.4 III-V-group nitride crystals

Wed. Sep 10, 2025 9:30 AM - 11:30 AM JST
Wed. Sep 10, 2025 12:30 AM - 2:30 AM UTC
P05 (Gymnasium)

[10a-P05-1]Fabrication and evaluation of BGaN neutron detectors with AlN buffer layers

〇Ryusuke Suzuki1, Ryohei Kudo1, Toru Oikawa1, Eito Koubo2, Genichiro Wakabayashi3, Yoshio Honda4, Hiroshi Amano4, Yoku Inoue1, Toru Aoki5, Takayuki Nakano5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

[10a-P05-2]Investigation of conditions for thick growth of high-Al-content AlGaN layers grown by RF-MBE

〇Ryotaro Kasai1, Ren Tanaka1, Trang Nakamoto2, Ryota Akaike3, Takao Nakamura3,4, Hideto Miyake3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.Mie Univ., 4.MRPCO)

[10a-P05-3]High temperature characteristics in normally-on recessed-gate AlGaN/GaN heterostructure FETs

〇Chihou Ri1, Ishou Chou1, Sho Shirasu1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

[10a-P05-4]Dependence of I-V characteristics on recess depth in recessed-gate AlGaN/GaN heterostructure FETs

〇Ishou Chou1, Sho Shirasu1, Ren Morita1, Zhipeng Li1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

[10a-P05-5]Fabrication and characterization of recessed gateless UV sensor using an AlGaN/GaN heterostructure

〇Sho Shirasu1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

[10a-P05-6]Electrical properties of AlGaN/GaN heterostructures anodized by forward bias and AlGaN/GaN heterostructures electrochemically energized by reverse bias (II)

〇Ren Morita1, Riku Ando1, Yoriko Suda1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

[10a-P05-7]Fabrication and evaluation of BGaN neutron detectors using GaN substrates

〇Sotaro Takenaka1, Tatsuhiro Sakurai1, Ryohei Kudo1, Eito Kokubo2, Katsuyuki Takagi3, Tatsuro Oda4, Masahiro Hino5, Yoshio Honda6, Hiroshi Amano6, Yoku Inoue1, Toru Aoki3, Takayuki Nakano1,3 (1.Shizuoka Univ, 2.Nagoya Univ., 3.RIE Shizuoka Univ, 4.ISSP Tokyo Univ, 5.KURNS, 6.IMaSS)

[10a-P05-8]XRT dislocation image analysis and classification of GaN using machine learning

〇Ryuya Narukawa1, Kazuki Ohnishi1, Yongzhao Yao1 (1.Mie Univ.)

[10a-P05-9]Study on crystal quality improvement in GaInN-based photovoltaic cells for
optical wireless power transmission system (2)

〇Sotaro Ishida1, Manatsu Nagai1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)

[10a-P05-10]Performance evaluation of GaInN-based photoelectric transducers fabricated on freestanding GaN substrates under monochromatic light irradiation

〇Manatsu Nagai1, Soutarou Isida1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst.Tech.)

[10a-P05-11]Design of Semipolar (1-101) InGaN Red Quantum Well Considering In Segregation

〇Kosuke Uchihara1, Yuki Sano1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.The Univ. of Osaka)

[10a-P05-12]Optical and Thermal Characterization of MicroLED Probes for Optogenetic Applications

〇Mitsuhiro Yamada1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi3,1 (1.Toyohashi Tech., 2.ALLOS, 3.Meijo Univ.)

[10a-P05-13]Effects of the Distance between Point Seeds on the Threading Dislocation Density in GaN Crystals Grown by the Na-flux Method

〇Ryotaro Sasaki1, Masayuki Imanishi1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.ILE, The Univ. of Osaka)

[10a-P05-14]Growth of GaN layer by plasma-enhanced LPE method(IV)

〇Haruki Nakagawa1, Daiki Hirose1, Fusuke Matsumura1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)

[10a-P05-15]Growth of GaN layer by plasma-enhanced LPE method(Ⅴ)

〇(M1)Fusuke Matsumura1, Haruki Nakagawa1, Daiki Hirose1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (1.Tokyo Denki Univ.)

[10a-P05-16]Evaluation of Thin Films Fabricated by GaN Sputtering Targets

〇Yoshihiro Ueoka1, Mirei Tokiwa1, Koo Bando1, Hidehiko Misaki1, Masahiro Uemukai2, Tomoyuki Tanikawa2, Ryuji Katayama2, Masami Mesuda1 (1.Tosoh Corp., 2.The Univ. of Osaka)
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