Presentation Information
[10a-P05-4]Dependence of I-V characteristics on recess depth in recessed-gate AlGaN/GaN heterostructure FETs
〇Ishou Chou1, Sho Shirasu1, Ren Morita1, Zhipeng Li1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
Keywords:
AlGaN/GaN heterostructure