[10a-P05-1~16] 15.4 III-V-group nitride crystals

[10a-P05-6] Electrical properties of AlGaN/GaN heterostructures anodized by forward bias and AlGaN/GaN heterostructures electrochemically energized by reverse bias (II)

〇Ren Morita¹, Riku Ando¹, Yoriko Suda¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

Keywords:

AlGaN/GaN hetero structure,Electrochemical,Nitride semiconductor