Presentation Information
[10a-P05-6]Electrical properties of AlGaN/GaN heterostructures anodized by forward bias and AlGaN/GaN heterostructures electrochemically energized by reverse bias (II)
〇Ren Morita1, Riku Ando1, Yoriko Suda1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
Keywords:
AlGaN/GaN hetero structure,Electrochemical,Nitride semiconductor