[10a-S102-1~9] 17.3 Layered materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-S102-4] Fabrication and Electrical Characterization of WSe₂ nFET Using Surface Plasma Treatment Under Source and Drain Electrodes

〇Takamasa Kawanago^1,2, Takumi Inaba¹, Naoya Okada¹ (1.SFRC, AIST, 2.PRESTO/JST)

Keywords:

2D semiconductor,FET,WSe2