Presentation Information
[10a-S102-8]High-frequency oscillation by negative differential resistance in p+-MoS2/h-BN/p+-MoS2 tunnel junctions
〇Mika Ito1, Kei Kinoshita1, Rai Moriya1, Arisa Nishimura1, Momoko Onodera1, Kenji Watanabe2, Takashi Taniguchi2, Takao Sasagawa3, Safumi Suzuki4, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Science Tokyo, 4.FIRST Science Tokyo)
Keywords:
tunneling,oscillation,2D materials
In this study, we fabricated a tunnel junction composed of bulk p+-MoS2/h-BN barrier/bulk p+-MoS2. The current-voltage characteristics of the tunnel junction exhibited negative differential resistance (NDR), which originates from the minigap in the valence band at the Γ point of bulk MoS2. By including this device in an LC circuit, we observed sustained oscillation at 252 kHz in the NDR region.