[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[10p-N105-1] Formation of step-and-terrace surface morphology on (001) β-Ga₂O₃ by developer etching

〇Takayoshi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,TMAH,wet etching