The 86th JSAP Autumn Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10p-N105-1~13]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 10, 2025 1:00 PM - 4:30 PM JST
Wed. Sep 10, 2025 4:00 AM - 7:30 AM UTC
N105 (Lecture Hall North)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[10p-N105-1]Formation of step-and-terrace surface morphology on (001) β-Ga2O3 by developer etching

〇Takayoshi Oshima1 (1.NIMS)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[10p-N105-2]HCl gas etching of (001) β-Ga2O3 under oxygen supply

〇Yuichi Oshima1, Takayoshi Oshima1 (1.NIMS)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N105-3]Fabrication of β-Ga2O3/air-gap structures on (001) β-Ga2O3 substrates

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N105-4]Application of mist CVD to fabricate β-Ga2O3 RF MESFETs

〇Shizuo Fujita1, Takeru Wakamatsu1, Hikaru Ikeda1, Yuji Ando2, Takahashi Hidemasa2, Ryutaro Makisako2, Tetsuzo Ueda3, Jun Suda2, Katsuhisa Tanaka1, Hidetaka Sugaya3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N105-5]Fabrication of gallium oxide photonic crystal nanobeam cavity structure

〇Jewook Jeon1, Natthajuks Pholsen2, Hideo Otsuki2, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST U-Tokyo, 2.IIS U-Tokyo)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)English Presentation

[10p-N105-6]Fabrication of (100) Thin Film β-Ga2O3 on Insulator towards Optical Applications

〇(P)Natthajuks Pholsen1, Jewook Jeon2, Hideo Otsuki1, Takayoshi Oshima3, Riena Jinno2, Satoshi Iwamoto1,2 (1.IIS, UTokyo, 2.RCAST, UTokyo, 3.NIMS)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-N105-7]Structural Characterization of Filamentary Twins in (001) β-Ga2O3 Epitaxial Films

〇(D)Hao Wen1, Ce Tao2, Zengyin Dong2, Xiaoqing Huo2, Kyoku Ihou1 (1.Tsinghua Univ., 2.CETC 46th Inst.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-N105-8]Dislocation analysis of β-Ga2O3 substrates and epitaxial layers using reflection and transmission synchrotron X-ray topography

〇Yongzhao Yao1,2, Daiki Katsube2, Hirotaka Yamaguchi2, Yoshihiro Sugawara2, Yukari Ishikawa2, Kohei Sasaki3, Akito Kuramata3 (1.Mie Univ., 2.JFCC, 3.Novel Crystal Technology)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Highlighted Presentation

[10p-N105-9]Operando observation technique of dislocations in β-Ga2O3 power devices under actual operating conditions using synchrotron X-ray topography

〇Yongzhao Yao1,2, Daiki Katsube2, Hirotaka Yamaguchi2, Yoshihiro Sugawara2, Yukari Ishikawa2, Daiki Wakimoto3, Hironobu Miyamoto3, Kohei Sasaki3, Akito Kuramata3 (1.Mie Univ., 2.JFCC, 3.Novel Crystal Technology)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N105-10]Operando X-ray topography observation of dislocation in β-Ga2O3(001) Schottky barrier diode during applying voltage

〇daiki katsube1, Yongzhao Yao1,2, Daiki Wakimoto3, Hironobu Miyamoto3, Kohei Sasaki3, Akito Kuramata3, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ., 3.Novel Crystal Technology Inc.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N105-11]Non-destructive detection of dislocations in β-Ga2O3(010) via phase-contrast microscopy

〇Yukari Ishikawa1, Daiki Katsube1, Koji Sato1, Yongzhao Yao1,2, Kohei Sasaki3 (1.JFCC, 2.Mie Univ., 3.NCT)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N105-12]Evaluation of the applicability of the LACBED method to structural analysis of dislocations introduced in β-Ga2O3

〇Yoshihiro Sugawara1, Yongzhao Yao2,1, Kohei Sasaki3, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ., 3.NCT, Inc.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-N105-13]First-principles calculations of vibrational spectra of β-Ga2O3 containing a point defect

〇Takafumi Ogawa1, Daiki Katsube1, Yukari Ishikawa1 (1.JFCC)
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