[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N105-10] Operando X-ray topography observation of dislocation in β-Ga₂O₃(001) Schottky barrier diode during applying voltage

〇daiki katsube¹, Yongzhao Yao^1,2, Daiki Wakimoto³, Hironobu Miyamoto³, Kohei Sasaki³, Akito Kuramata³, Yukari Ishikawa¹ (1.JFCC, 2.Mie Univ., 3.Novel Crystal Technology Inc.)

Keywords:

power device,dislocation,operando