[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N105-11] Non-destructive detection of dislocations in β-Ga₂O₃(010) via phase-contrast microscopy

〇Yukari Ishikawa¹, Daiki Katsube¹, Koji Sato¹, Yongzhao Yao^1,2, Kohei Sasaki³ (1.JFCC, 2.Mie Univ., 3.NCT)

Keywords:

phase contrast microscopy,beta-Ga2O3,dislocation

We demonstrated that dislocations in β-Ga₂O₃(010) crystals can be detected using phase contrast microscopy, with a one-to-one correspondence to be bright spots observed in synchrotron reflection X-ray topography. Furthermore, by varying the focal depth during observation, we found that the three-dimensional distribution of dislocations can also be obtained.