[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[10p-N105-2] HCl gas etching of (001) β-Ga₂O₃ under oxygen supply

〇Yuichi Oshima¹, Takayoshi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,etching