[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[10p-N105-3] Fabrication of β-Ga₂O₃/air-gap structures on (001) β-Ga₂O₃ substrates

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,etching,MEMS