Presentation Information
[10p-N105-4]Application of mist CVD to fabricate β-Ga2O3 RF MESFETs
〇Shizuo Fujita1, Takeru Wakamatsu1, Hikaru Ikeda1, Yuji Ando2, Takahashi Hidemasa2, Ryutaro Makisako2, Tetsuzo Ueda3, Jun Suda2, Katsuhisa Tanaka1, Hidetaka Sugaya3 (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)
Keywords:
gallium oxide,mist CVD,RF device
To demonstrate the potential of the mist CVD method for β-Ga2O3 device applications, a prototype MESFET with a gate length of 0.45 μm was fabricated and its DC and RF characteristics were characterized. An MESFET amplifier with an input-output matching circuit realized a linear gain of 6.5 dB at 2.42 GHz,