[10p-N105-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N105-4] Application of mist CVD to fabricate β-Ga₂O₃ RF MESFETs

〇Shizuo Fujita¹, Takeru Wakamatsu¹, Hikaru Ikeda¹, Yuji Ando², Takahashi Hidemasa², Ryutaro Makisako², Tetsuzo Ueda³, Jun Suda², Katsuhisa Tanaka¹, Hidetaka Sugaya³ (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)

Keywords:

gallium oxide,mist CVD,RF device

To demonstrate the potential of the mist CVD method for β-Ga₂O₃ device applications, a prototype MESFET with a gate length of 0.45 μm was fabricated and its DC and RF characteristics were characterized. An MESFET amplifier with an input-output matching circuit realized a linear gain of 6.5 dB at 2.42 GHz,