[10p-N206-1~13] 6.3 Oxide electronics

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-N206-7] Research on the electrical characteristics of oxide semiconductor WO₃ nanoparticle using nanogap electrode for gas sensor applications

〇(M2)Ryo Fujioka¹, Sanae Murayama², Yuki Komoto², Sankar Ganesh Ramaraj¹, Hiroyasu Yamahara¹, Masateru Taniguchi², Hitoshi Tabata¹ (1.Univ. of Tokyo, 2.Sanken, Osaka Univ.)

Keywords:

Nanogap,Oxide semiconductor,Gas sensor

To realize a highly sensitive gas sensor, we evaluated the electrical characteristics of the sensor device combining nanogap electrodes with WO₃ nanoparticles. WO₃ nanoparticles with diameter of 7.3 nm were drop onto nanogap electrodes with gaps of 30 nm, 50 nm, and 100 nm. Electrical characteristics were measured before and after nanoparticle drop, as well as in response to temperature changes and VOC exposure. It is expected that reducing the nanogap width increases the contribution of the Schottky barrier to the overall device impedance.