Presentation Information
[10p-N301-10]Evaluation of crystallinity of sputtered GaInN on Lu--substituted ScAlMgO4 substrate
〇Naoto Fukami1, Ryotaro Ito1, Ryusei Sakamoto1, Minori Kinoshita1, Ai Sakakibara1, Seiji Ishimoto2, Seiya Nisimura2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4, Shiori Ii4 (1.Meijo Univ., 2.E and E Evolution Ltd., 3.Oxide Co., 4.Shibaura Mechatronics Co.)
Keywords:
ScAlMgO4,GaInN,sputtering
Piezoelectric field caused by lattice mismatch between MQWs and substrate was a problem in realizing high-efficiency red LEDs using GaInN as MQWs. ScAlMgO4 substrate was used instead of sapphire substrate, and GaInN with similar In composition to red MQWs was sputter grown as a substrate. However, this substrate had poor surface flatness and low In composition. Therefore, we replaced some of the Sc sites in the substrate with Lu to reduce the lattice mismatch between the red MQWs and the sputter-grown GaInN.