The 86th JSAP Autumn Meeting 2025
Advanced Search

Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[10p-N301-1~13]15.4 III-V-group nitride crystals

Wed. Sep 10, 2025 1:30 PM - 5:00 PM JST
Wed. Sep 10, 2025 4:30 AM - 8:00 AM UTC
N301 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-1]Evaluation of the polarity-inverted AlN interface using several oxidation process

〇Tomohiro Tamano1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Zentaro Akase4, Shigetaka Tomiya4, Hideto Miyake1,2 (1.Grad. Sch. of Eng. Mie Univ, 2.IC-SDF MIe Univ., 3.ORIP Mie Univ., 4.NAIST)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[10p-N301-2]Study on surface morphology of nitrogen polar AlN by surface treatment

〇Taisei Kimoto1, Aina Hiyama Zazuli1, Fumiya Yamanaka1, Haruki Danbata1, Amane Hayashiuchi1, Ryosuke Ninoki1, Nobuteru Hirata1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-N301-3]Theoretical study for structural stability and adsorption behavior on GaN(000-1) surface with steps and kinks

〇Toru Akiyama1, Taiki Tahara1, Takahiro Kawamura1 (1.Mie Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-N301-4]Study on regrowth of N-polar GaN channel in N-polar GaN/AlN HEMT

〇Haruki Danbata1, Aina Hiyama Zazuli1, Fumiya Yamanaka1, Taisei Kimoto1, Amane Hayashiuchi1, Kaito Fujiwara1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-5]Growth of the GaN channel layers in N-polar GaN/AlN structures using pulsed TMG supply

〇Fumiya Yamanaka1, Aina Hiyama Zazuli1, Taisei Kimoto1, Ryosuke Ninoki1, Amane Aayashiuchi1, Haruki Danbata1, Nobuteru Hirata1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[10p-N301-6]Transport limitation in N-polar AlN-based thin GaN channel HEMTs

〇Markus Pristovsek1, Yoann Robin1, Xu Yang1, Itsuki Furuhashi1, Chengzhi Zhang2, Matthew D. Smith2, Martin Kuball2, Sheng Zhang3, Xinhua Wang3 (1.Nagoya Univ., 2.Bristol Univ., 3.Inst. Microelectr. CAS)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-7]Investigation of ScAlMgO4 substrate removal method for fabrication of thin-film LEDs

〇(M1)Minori Kinoshita1, Ryusei Sakamoto1, Ryoutarou Ito1, Ai Sakakibara1, Satoshi Kamiyama1, Tetuya Takeuchi1, Motoaki Iwaya1, Atushi Suzuki2, Seizi Ishimoto2 (1.Meijo Univ., 2.E&E Evolution Corp)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N301-8]Non-contact and non-destructive simultaneous measurement of thickness and electrical properties of ultrathin GaN films on ScAlMgO4 substrates by THz-TDSE

〇Kaito Tsuchida1, Takashi Fujii2,3, Toshiyuki Iwamoto3, Tsutomu Araki1 (1.Ritsumei Univ., 2.ROST, 3.NIPPO PRECISION)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-N301-9]Investigation of InGaN Growth Conditions on ScAlMgO4 Substrate by RF-MBE

〇Yoshiaki Nishimura1, Trang Nakamoto2, Takashi Fujii3, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-N301-10]Evaluation of crystallinity of sputtered GaInN on Lu--substituted ScAlMgO4 substrate

〇Naoto Fukami1, Ryotaro Ito1, Ryusei Sakamoto1, Minori Kinoshita1, Ai Sakakibara1, Seiji Ishimoto2, Seiya Nisimura2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4, Shiori Ii4 (1.Meijo Univ., 2.E and E Evolution Ltd., 3.Oxide Co., 4.Shibaura Mechatronics Co.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-11]MQW growth on sputtered GaInN on lattice-controlled ScAlMgO4 substrate

〇(M2)Ryotaro Ito1, Ryusei Sakamoto1, Naoto Hukami1, Minori Kinoshita1, Ai Sakakibara1, Seiji Ishimoto2, Seiya Nishimura2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4, Shiori Ii4 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.OXIDE Corp., 4.Shibaura Mechatronics Co.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-12]Investigation of n-GaInN growth in nitride-based red LEDs on ScAlMgO4substrate

〇(M1)Ai Sakakibara1, Ryotaro Ito1, Ryusei Sakamoto1, Naoto Hukami1, Minori Kinoshita1, Seiji Ishimoto2, Atsushi Suzuki2 (1.Meijo Univ., 2.E&E Evolution Ltd.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-13]Optimization of EBL composition in GaInN-based red PEDOT-LEDs on ScAlMgO4 substrates

〇Ryusei Sakamoto1, Ryotaro Ito1, Naoto Fukami1, Minori Kinoshita1, Ai Sakakibara1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Atsushi Suzuki2, Seiji Ishimoto2, Emi Matsuyama2 (1.Meijo Univ., 2.E&E Evolution Ltd.)
Back to Category List