[10p-N301-1~13] 15.4 III-V-group nitride crystals

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-12] Investigation of n-GaInN growth in nitride-based red LEDs on ScAlMgO₄substrate

〇(M1)Ai Sakakibara¹, Ryotaro Ito¹, Ryusei Sakamoto¹, Naoto Hukami¹, Minori Kinoshita¹, Seiji Ishimoto², Atsushi Suzuki² (1.Meijo Univ., 2.E&E Evolution Ltd.)

Keywords:

LED,epitaxial growth

A problem with nitride semiconductor LEDs is that the external quantum efficiency decreases as the wavelength increases. Therefore, this research group aims to reduce the compressive strain in the red MQW and suppress the efficiency decrease by using a ScAlMgO₄ (SAM) substrate that is lattice-matched to Ga_0.85In_0.15N. In this study, taking into account the lattice matching with the SAM substrate, we investigated the effect of the growth temperature of GaInN used as an underlayer on the crystallinity and surface state.