Presentation Information
[10p-N301-2]Study on surface morphology of nitrogen polar AlN by surface treatment
〇Taisei Kimoto1, Aina Hiyama Zazuli1, Fumiya Yamanaka1, Haruki Danbata1, Amane Hayashiuchi1, Ryosuke Ninoki1, Nobuteru Hirata1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)
Keywords:
nitride semiconductor,AlN
High electron mobility transistors (HEMT) using AlN as a substrate are expected to have higher breakdown voltage and higher temperature operation than conventional metal-polar AlGaN/GaN HEMT. We have fabricated N-polar GaN/AlGaN/AlN HEMT on sapphire substrates and evaluated their performance. In this study, we investigated the effect of surface treatment before crystal growth on the surface condition of AlN substrates with the aim of further improving device performance by using AlN substrates.