Presentation Information
[10p-N301-4]Study on regrowth of N-polar GaN channel in N-polar GaN/AlN HEMT
〇Haruki Danbata1, Aina Hiyama Zazuli1, Fumiya Yamanaka1, Taisei Kimoto1, Amane Hayashiuchi1, Kaito Fujiwara1, Satoshi Kurai1, Narihito Okada1, Yoichi Yamada1 (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ)
Keywords:
nitride semiconductor,AlN
N-polar GaN/AlN HEMT structures offer several advantages, such as the elimination of a GaN cap layer and the suppression of crack formation due to compressive strain in the GaN channel. Additionally, the formation of a high-density two-dimensional electron gas is expected. However, one of the main challenges is the degradation of carrier performance caused by the N-polar AlN layer.
In this study, we aim to address this issue by investigating the impact of surface exposure to air, surface treatment, and intermediate layers before GaN channel regrowth. We report on the relationship between these pre-growth conditions and the resulting quality of the GaN channel and its electrical properties.
In this study, we aim to address this issue by investigating the impact of surface exposure to air, surface treatment, and intermediate layers before GaN channel regrowth. We report on the relationship between these pre-growth conditions and the resulting quality of the GaN channel and its electrical properties.