[10p-N301-1~13] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-5] Growth of the GaN channel layers in N-polar GaN/AlN structures using pulsed TMG supply

〇Fumiya Yamanaka¹, Aina Hiyama Zazuli¹, Taisei Kimoto¹, Ryosuke Ninoki¹, Amane Aayashiuchi¹, Haruki Danbata¹, Nobuteru Hirata¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad.School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

Keywords:

N-polar GaN/AlN,MOVPE,TMG pulse supply

N-polar GaN/AlN HEMT are expected to have even higher power and higher temperature operation than Ga-polar AlGaN/GaN HEMT, which are conventional structures. We have succeeded in two-dimensional coherent growth of N-polar GaN in the channel layer by MOVPE at low temperatures and high V/III ratios. However, mobility is low and there is still room for improvement in device performance. We believe that this is due to the increase in impurity concentration caused by low-temperature growth. Therefore, we attempted to improve the decomposition efficiency by pulsed supply of TMG.