[10p-N301-1~13] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-N301-7] Investigation of ScAlMgO₄ substrate removal method for fabrication of thin-film LEDs

〇(M1)Minori Kinoshita¹, Ryusei Sakamoto¹, Ryoutarou Ito¹, Ai Sakakibara¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Atushi Suzuki², Seizi Ishimoto² (1.Meijo Univ., 2.E&E Evolution Corp)

Keywords:

semiconductor

In nitride semiconductors, external quantum efficiency decreases with longer wavelengths due to lattice mismatch between GaN and GaInN. To address this, a ScAlMgO₄ substrate was used to suppress strain. Cleaving enables thin-film structures and improves light extraction. Although manual cleaving has been reported, the method is unclear, and complete substrate removal is difficult. Therefore, a stepwise process was developed.