[10p-N301-1~13] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-N301-8] Non-contact and non-destructive simultaneous measurement of thickness and electrical properties of ultrathin GaN films on ScAlMgO₄ substrates by THz-TDSE

〇Kaito Tsuchida¹, Takashi Fujii^2,3, Toshiyuki Iwamoto³, Tsutomu Araki¹ (1.Ritsumei Univ., 2.ROST, 3.NIPPO PRECISION)

Keywords:

THz,GaN,Ellipsometry